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Found 4037 results for any of the keywords gan on sapphire. Time 0.011 seconds.
GaN on Sapphire HEMT Wafer with High Power DensityGaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or PowerThe transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
GaN Wafer Including Substrate, Template Epitaxy WaferGaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
AlGaN / GaN on Silicon HEMT Wafer with High 2DEG MobilityGaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
GaN on GaN Homoepitaxial Growth with Low Dislocation DensityGaN on GaN technology is grown GaN epi layers on homogeneous substrate, is an effective way to reduce dislocation density.
Freestanding GaN (Gallium Nitride) Substrate Grown by HVPEFree-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
N-Type GaN (Gallium Nitride) Freestanding Substrate WaferN-type GaN free-standing wafer is undoped or doped with Silicon for high power and high frequency devices: satellites, power amplifiers.
Epi-ready Semi-Insulating Freestanding GaN (Gallium Nitride) SubstrateSemi-insulating Freestanding GaN (Gallium Nitride) Substrate grown by HVPE is less or free macro defect density for RF device.
Technology for Manufacturing SiC, GaN, III-V Semiconductor WafersTechnology: HVPE, MOCVD, MBE, etc are used by semiconductor wafer fabs to grow SiC wafers, GaN wafers, III-V wafers with low defects and low impurity.
Ganwafer – One of Semiconductor Wafer Manufacturing CompaniesGanwafer is a top-class enterprise for compound semiconductor material integrating semiconductor crystal growth, process development, and epitaxy.
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